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Nanoscale Transistors: Device Physics, Modeling and Simulation Mark Lundstrom Softcover reprint of hardcover 1st ed. 2006 edition
Nanoscale Transistors: Device Physics, Modeling and Simulation
Mark Lundstrom
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.
218 pages, 106 black & white illustrations, biography
| Médias | Livres Paperback Book (Livre avec couverture souple et dos collé) |
| Validé | 29 octobre 2010 |
| ISBN13 | 9781441939159 |
| Éditeurs | Springer-Verlag New York Inc. |
| Pages | 218 |
| Dimensions | 155 × 235 × 12 mm · 326 g |
| Langue et grammaire | Anglais |